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AssigneeHuazhong University of Science and Technology
InventorsLong You, Shuai Zhang, Zhen Cao
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A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with spin-orbit torque (SOT) effect is provided. The disclosure uses SOT or magnetic field to change the magnetic moment. After the current or magnetic field is removed, the magnetic moment returns to the easy axis direction. Under the effect of thermal fluctuation, the magnetic moment is randomly oriented in the easy axis direction. The non-volatile devices are formed into an array, the magnetic moments of all non-volatile devices are randomly distributed after a write operation. The read state can be used as a random code to implement the reconfigurable PUF. The PUF has a simple structure and guarantees security. The random code in the disclosure may be two-state or multi-state, which is related to the number of magnetic domains of the ferromagnetic layer. A large number of challenge response pairs form a strong PUF.
A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with a spin-orbit torque (SOT) effect, comprising:
A method for configuring a reconfigurable PUF physical unclonable function (PUF) based on a device with a spin-orbit torque (SOT) effect, comprising:
A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with a spin-orbit torque (SOT) effect, comprising:
A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with a spin-orbit torque (SOT) effect, comprising:
Dependencies are inferred from the claim text.
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Generation of secret information including derivation or calculation of cryptographic keys or passwords: involving user or device identifiers,…
Apparatus or methods whereby a given sequence of signs
Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer: the spacer…
Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer:…
About 14 years 10 months of term left · ends 10 Sep 2041 (estimated)
This application claims the priority benefit of China application serial no. 201910938124.7, filed on Sep. 29, 2019. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
The disclosure relates to the field of information security, and more specifically relates to a method for configuring a reconfigurable physical unclonable function (PUF) based on a device with a spin-orbit torque (SOT) effect.
The information technology in modern society is rapidly developing. The Internet and Internet of Things technologies involve all aspects of our lives, including clothing, food, housing, transportation, finance, social interaction, etc. When we use the Internet, we also store a lot of personal information on the Internet. Such information is related to aspects such as our privacy or property security. In addition, the rapid development of smart devices, such as smart phones and smart cards, have also been widely used in our lives and production. How to effectively authenticate and encrypt the physical entities has become an important issue in the field of information security. Physical unclonable function (PUF) has been introduced into the field of information security as an effective and high-security encryption method. PUFs utilize process variations and physical stochastics to generate random codes. The random codes are derived from physical randomness, which cannot be copied and has a high degree of security. The PUF is widely used in the fields of key generation and identity authentication.
FIG. 1 is a schematic diagram of a structure of a first device with a spin-orbit torque (SOT) effect in the prior art.
FIG. 2 is a schematic diagram of a method for configuring a reconfigurable physical unclonable function (PUF) based on a device with an SOT effect according to Embodiment 2 of the disclosure.
FIG. 3 is a schematic diagram of a structure of a second device with an SOT effect in the prior art.
For the objective, technical solutions, and advantages of the disclosure to be clearer, the disclosure is further described in detail below with reference to the accompanying drawings and the embodiments. It should be understood that the specific embodiments described here are only used to explain the disclosure, but not to limit the disclosure. In addition, the technical features involved in the various embodiments of the disclosure described below may be combined with each other as long as there is no conflict therebetween.
As shown in FIG. 1, the prior art discloses a device with a spin-orbit torque (SOT) effect based on a ferromagnetic material. The device is composed of a non-volatile device array. The non-volatile device has a multilayer film structure, which sequentially includes from bottom to top: a spin current generation layer, the first pair of bottom electrodes, and a second pair of bottom electrodes made of heavy metal materials or topological insulators; a ferromagnetic layer made of a ferromagnetic material; an insulating layer made of an insulating material; and a cap layer made of a heavy metal material. The easy axis direction of the magnetic moment of the ferromagnetic layer is in the vertical direction. The first pair of bottom electrodes and the second pair of bottom electrodes are orthogonal to each other.
Specifically, the spin current generation layer is a hall bar structure, and the film surface thereof is cross-shaped. The film surfaces of the ferromagnetic layer, the insulating layer, and the cap layer are nanometer-sized rectangles or circles, and are sequentially stacked on a cross-shaped intersection portion of the spin current generation layer.