Optoelectronic semiconductor chip and method of manufacturing an optoelectronic semiconductor chip

A method of manufacturing an optoelectronic semiconductor chip, wherein the method comprises:

• providing a semiconductor body with a main plane of extension;
• providing an active region in the semiconductor body, wherein the active region is configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor chip;
• applying at least two conversion elements to the semiconductor body, the at least two conversion elements configured to convert the wavelength of the electromagnetic radiation emitted by the active region during operation;
• and
• forming a barrier at least partially impermeable to the electromagnetic radiation emitted by the active region;
• wherein:
• the barrier is disposed in a lateral direction between the at least two conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body;
• the barrier extends transverse to the lateral direction;
• a reflective or absorbent material is arranged on a side surface of the barrier;
• the active region has at least two emission regions configured to be controlled separately from one another, each of the at least two conversion elements is disposed in a direction of emission of electromagnetic radiation emitted from one of the at least two emission regions;
• the barrier is formed before the application of the at least two conversion elements;
• and
• the barrier is formed by ablating the semiconductor body.