III-V light emitting device having low Si—H bonding dielectric layers for improved P-side contact performance

A III-V semiconductor device comprising:

• a III-V semiconductor layer;
• a p-contact defining an ohmic contact with the III-V semiconductor layer;
• a dielectric layer encapsulating or overlying the p-contact;
• the dielectric layer comprising a predetermined Si—H, Si—OH or Si—NH content, wherein the dielectric layer has a hydrogen content greater than 4 at. % and less than 13 at. %;
• the Si—H, Si—OH or Si—NH content selected whereby the dielectric layer inhibits a degradation of the p-contact in a subsequent thermal cycling or annealing process to define a post-thermal cycling low resistivity of the p-contact.