Light-emitting element and method for manufacturing light-emitting element

A method for manufacturing a light-emitting element, the method comprising:

• forming a first n-type nitride semiconductor layer doped with an n-type impurity;
• forming, on the first n-type nitride semiconductor layer, a first light-emitting layer;
• forming, on the first light-emitting layer, a p-type GaN layer doped with a p-type impurity;
• forming, on the p-type GaN layer, an intermediate layer comprising a non-doped GaN layer and a non-doped InGaN layer;
• forming, on the intermediate layer, an n-type GaN layer doped with an n-type impurity, wherein an impurity concentration of the n-type impurity of the n-type GaN layer is higher than an impurity concentration of the n-type impurity of the first n-type nitride semiconductor layer;
• forming, on the n-type GaN layer, a second n-type nitride semiconductor layer doped with an n-type impurity;
• forming, on the second n-type nitride semiconductor layer, a second light-emitting layer;
• and
• forming, on the second light-emitting layer, a p-type nitride semiconductor layer doped with a p-type impurity;
• wherein the non-doped InGaN layer is located between the non-doped GaN layer and the n-type GaN layer, wherein a tunnel junction is formed between the p-type GaN layer and the n-type GaN layer.