Epitaxial light emitting structure and light emitting diode

An epitaxial light emitting structure, comprising:

• an n-type semiconductor layer;
• a p-type semiconductor layer;
• and
• a light emitting component disposed between said n-type semiconductor layer and said p-type semiconductor layer and including a multiple quantum well structure which contains a plurality of first periodic layered elements,
• wherein each of said first periodic layered element includes a first layer, a second layer which is disposed on said first layer, and a third layer which is disposed on said second layer, said first layers, said second layers and said third layers in said first periodic layered elements being alternately stacked on one another;
• wherein for each of said first periodic layered elements:
• said first layer is made of InxGa1-xN, where 0≤x≤1,
• said second layer is made of AlzGa1-zN, where 0≤z≤1,
• said third layer is made of AlN and has a thickness not greater than 30 Å, and
• said first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3.