Methods for manufacturing high photoelectric conversion efficiency solar cell
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTakenori Watabe, Hiroshi Hashigami, Hiroyuki Ohtsuka
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Abstract
The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.
Claims18
A method for manufacturing a solar cell comprising:
- preparing a semiconductor silicon substrate, wherein
- the semiconductor silicon substrate is prepared such that
- the semiconductor silicon substrate has an electrode, the electrode being formed by baking an electrode precursor containing Ag powder on at least one main surface of the semiconductor silicon substrate, and
- the semiconductor silicon substrate has a PN junction;
- and
- performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less;
- wherein
- in the baking of the electrode precursor, a temperature drop rate from a maximum temperature to 450° C. is set to 50° C./second or more, and
- after preparing the semiconductor silicon substrate, a low-temperature curing conductive material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor substrate in a pattern shape, and then, at the time of performing the annealing treatment, the low-temperature curing conductive material is cured at the same time to form a conductor section.
A method for manufacturing a solar cell comprising:
- preparing a semiconductor silicon substrate, wherein
- the semiconductor silicon substrate is prepared such that
- the semiconductor silicon substrate has an electrode, the electrode being formed by baking an electrode precursor containing Ag powder on at least one main surface of the semiconductor silicon substrate, and
- the semiconductor silicon substrate has a PN junction;
- and
- performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less;
- wherein
- in the baking of the electrode precursor, a temperature drop rate from a maximum temperature to 450° C. is set to 50° C./second or more, and
- after preparing the semiconductor silicon substrate, an insulating material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor silicon substrate in a pattern shape, and then, at the time of performing the annealing treatment, the insulating material is cured at the same time to form an insulator film.
Dependencies are inferred from the claim text.