US 11,538,941 B2Granted

Integrated capacitive element and corresponding production method

AssigneeSTMicroelectronics (Rousset) SAS

InventorAbderrezak Marzaki

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Abstract

An integrated circuit includes a first semiconductor well contained in a semiconductor substrate and a second semiconductor well contained in the first semiconductor well. A capacitive element for the integrated circuit includes a first electrode and a second electrode, where the first electrode includes at least one vertical conductive structure filling a trench extending vertically into the first semiconductor well. The vertical conductive structure is electrically isolated from the first semiconductor well by a dielectric envelope covering a base and the sides of the trench. The vertical conductive structure penetrates into the second semiconductor well at least at one longitudinal end of the trench. The second electrode includes the first semiconductor well and the second semiconductor well.

Claims28

Dependent claims

An integrated circuit, comprising:

a first doped semiconductor well of a first type of conductivity contained in a semiconductor substrate;
a second doped semiconductor well of a second type of conductivity opposite to the first type of conductivity, said second doped semiconductor well contained in the first doped semiconductor well;
and
a capacitive element comprising a first electrode and a second electrode;
wherein the first electrode of said capacitive element includes at least one vertical conductive structure filling a trench extending vertically into the first doped semiconductor well, the vertical conductive structure being electrically isolated from the first doped semiconductor well by a dielectric envelope covering a base and sides of said trench;
wherein said trench longitudinally extends to penetrate into the second doped semiconductor well at a first longitudinal end of the trench;
wherein the vertical conductive structure within said trench is present at said first longitudinal end of the trench;
and
wherein the second electrode of said capacitive element includes said first doped semiconductor well and said second doped semiconductor well.

6 more elements

A method for producing an integrated circuit including a capacitive element having a first electrode and a second electrode, comprising:

forming a first doped semiconductor well of a first type of conductivity contained in a semiconductor substrate;
forming a second doped semiconductor well of a second type of conductivity contained in the first well, said second type of conductivity being opposite to the first type of conductivity;
forming at least one vertical conductive structure, comprising:
forming at least one trench extending vertically into the first doped semiconductor well and penetrating into the second doped semiconductor well at least at one longitudinal end,
forming a dielectric envelope covering a base and the sides of said at least one trench, and
forming a vertical conductive structure filling said at least one trench and being electrically isolated from the first doped semiconductor well by the dielectric envelope;
electrically coupling the first electrode by formation of contacts on the vertical conductive structure;
and
electrically coupling the second electrode by formation of contacts on the first doped semiconductor well and on the second doped semiconductor well.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/196,226Filed 9 Mar 2021
Priority: FR 200255216 Mar 2020
Published: US 2021/0288189 A116 Sep 2021
Granted: 27 Dec 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 1/665
Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors: trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
H10B 41/42
Characterised by the peripheral circuit region: simultaneous manufacture of periphery and memory cells
H10D 1/048
Of conductor-insulator-semiconductor capacitors, e.g. trench capacitors: having PN junctions, e.g. hybrid capacitors with MOS control
H10D 62/106
By having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination…