Method for forming stressor, semiconductor device having stressor, and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsChe-Wei Yang, Hao-Hsiung Lin, Samuel C. Pan
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Abstract
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a first stressor under a semiconductor fin by an ion beam, wherein the first stressor is formed on one side of the semiconductor fin;
- forming a second stressor under the semiconductor fin on another side of the semiconductor fin opposite to the first stressor with respect to the semiconductor fin;
- and
- forming a gate structure over the semiconductor fin, wherein the first stressor and the second stressor are under the gate structure.
A method for manufacturing a semiconductor device including a first transistor and a second transistor, the method comprising:
- sequentially forming first and second stressors in a substrate;
- forming a first gate structure for the first transistor over the first stressor;
- and
- forming a second gate structure for the second transistor over the second stressor,
- wherein the first transistor and the second transistor are N-type transistors, or the first transistor and the second transistor are P-type transistors, wherein the first and second stressors are formed using a focused ion beam of which spot size is in a range from 0.5 nm to 10 nm and no implantation mask.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first stressor under a channel region of a gate structure by an ion beam, wherein the first stressor is formed on one side of the channel region;
- and
- forming a second stressor under the channel region on another side of the channel region opposite to the first stressor with respect to the channel region, wherein first stressor and the second stressor are positioned unsymmetrically with respect to the channel region of the gate structure.
Dependencies are inferred from the claim text.