Semiconductor device
AssigneeRohm Co., Ltd.
InventorYusuke Shimizu
Life of this patent
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Abstract
A semiconductor device includes: an n−-type epitaxial layer having an element main surface; a p−-type body region, an n+-type source region, and n+-type drain regions; and a gate electrode including a second opening and first openings formed in a portion separated from the second opening toward the drain regions, wherein the body region selectively has a second portion exposed to the first openings of the gate electrode, and wherein the semiconductor device further includes a p+-type body contact region formed in the portion of the body region exposed to the first openings and having an impurity concentration higher than an impurity concentration of the body region.
Claims15
A semiconductor device comprising:
- a first conductive type semiconductor layer having an element main surface;
- a second conductive type body region formed on the element main surface of the semiconductor layer;
- a first conductive type source region formed in the body region and separated inward from an outer edge of the body region;
- at least one first conductive type drain region formed on the element main surface of the semiconductor layer and separated from the body region in a first direction;
- and
- a gate electrode facing a channel region between the source region and the outer edge of the body region, the gate electrode including a first edge portion adjacent to the source region, and at least one first opening formed in a portion separated from the first edge portion toward the at least one drain region in the first direction or at least one concave portion in which the first edge portion is selectively formed to be recessed toward the at least one drain region in the first direction,
- wherein the body region selectively has a portion exposed to the at least one first opening or the at least one concave portion of the gate electrode,
- wherein the semiconductor device further includes a second conductive type body contact region formed in the portion of the body region exposed to the at least one first opening or the at least one concave portion and having an impurity concentration higher than an impurity concentration of the body region, and
- wherein the source region is divided by the body contact region in a second direction intersecting the first direction.
Dependencies are inferred from the claim text.