Semiconductor transistor device and method of manufacturing the same

A semiconductor transistor device, comprising:

• a source region;
• a drain region;
• a body region;
• a drift region comprising a drift zone vertically between the body region and the drain region;
• a gate region laterally aside the body region and configured to form a vertical channel in the body region;
• a Schottky diode electrically connected in parallel to a body diode formed between the body region and the drift region, a diode junction of the Schottky diode being formed adjacent to the drift region and is arranged vertically above a lower end of the body region;
• and
• field electrode regions which respectively extend vertically into the drift region and are arranged consecutively in a first lateral direction,
• wherein the diode junction of the Schottky diode extends in the first lateral direction over a whole distance between two neighboring ones of the field electrode regions,
• wherein the field electrode regions are respectively formed as a vertical needle in a vertical needle trench, and wherein the vertical needles are arranged consecutively in the first lateral direction and also in a second lateral direction,
• wherein the diode junction of the Schottky diode is arranged in a diode cell of the semiconductor transistor device,
• wherein an area of the diode junction of the Schottky diode has a share of at least 10% at an area of the diode cell.