High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance

A semiconductor device, comprising:

• a channel layer;
• a carrier generation layer disposed on the channel layer;
• a source contact disposed on the carrier generation layer;
• a drain contact disposed on the carrier generation layer;
• a gate contact disposed between the source contact and the drain contact;
• a plurality of conductive stripes disposed on the carrier generation layer in direct contact with the carrier generation layer and electrically coupled with the drain contact;
• and
• a multiplicity of conductive transverse stripes disposed directly on the carrier generation layer in an area between the plurality of conductive stripes and the gate contact, the multiplicity of conductive transverse stripes not being in direct physical contact with the plurality of conductive stripes, at least one of the multiplicity of conductive transverse stripes having a curved shape.

A semiconductor device, comprising:

• a channel layer;
• a carrier generation layer disposed on the channel layer;
• a source contact disposed on the carrier generation layer;
• a drain contact disposed on the carrier generation layer;
• a gate contact disposed between the source contact and the drain contact;
• and
• a plurality of conductive stripes electrically coupled with the drain contact, the plurality of conductive stripes disposed entirely below the drain contact in direct contact with the carrier generation layer, each of the plurality of conductive stripes being made of a pGaN material.

A semiconductor device, comprising:

• a channel layer;
• a carrier generation layer disposed on the channel layer;
• a source contact disposed on the carrier generation layer;
• a drain contact disposed on the carrier generation layer;
• a gate contact disposed between the source contact and the drain contact;
• a plurality of conductive stripes disposed directly on the carrier generation layer, each of the plurality of conductive stripes extending from the drain contact and electrically coupled with the drain contact;
• and
• a field plate coupled to one or more of the plurality of conductive stripes, the field plate configured to redistribute an electric field associated with the plurality of conductive stripes.