Semiconductor device and method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Cheng Shen, Guan-Jie Shen
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Abstract
A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, comprising:
- forming a first work function metal layer over the channel region;
- forming an oxygen absorbing layer over the first work function metal layer;
- and
- forming a second work function metal layer over the oxygen absorbing layer;
- forming a gate electrode metal layer over the plurality of work function metal layers,
- wherein the work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials;
- and
- forming a gate dielectric layer over the channel region;
- and
- forming another oxygen absorbing layer over the gate dielectric layer before forming the plurality of work function metal layers over the channel region of the semiconductor device.
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of first metal nitride layers and a second metal nitride layer over a channel region of the semiconductor device, wherein the first metal nitride layers and the second metal nitride layer comprise a first metal, comprising:
- forming a first first metal nitride layer over the channel region;
- forming the second metal nitride layer over the first first metal nitride layer;
- and
- forming a second first metal nitride layer over the second metal nitride layer;
- and
- forming a gate electrode metal layer over the plurality of first metal nitride layers,
- wherein the second metal nitride layer has a greater concentration of the first metal than the first metal nitride layer, and
- the first and second metal nitride layers, and the gate electrode metal layer are formed of different materials.
A semiconductor device, comprising:
- a gate stack structure disposed over a channel region of semiconductor substrate,
- wherein the gate stack structure comprises:
- a gate dielectric layer disposed over the channel region;
- a first oxygen absorbing layer disposed over the gate dielectric layer;
- a plurality of work function metal layers disposed over the first oxygen absorbing layer;
- a second oxygen absorbing layer disposed between a pair of the work function metal layers;
- and
- a gate electrode metal layer disposed over the plurality of work function metal layers,
- wherein the work function metal layers, oxygen absorbing layers, and gate electrode metal layer are different materials.
Dependencies are inferred from the claim text.