Ion implantation to form step-oxide trench MOSFET
AssigneeApplied Materials, Inc.
InventorsSipeng Gu, Yi Zheng, Qintao Zhang, John Hautala
Life of this patent
Estimating the term…
Abstract
Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, forming a gate spacer layer over the device structure, and removing the gate spacer layer from a top surface of the device structure and from a first section of each of the plurality of trenches, wherein a portion of the gate spacer layer remains along a second section of each of the plurality of trenches. The method may further include forming a gate oxide layer along the first section of each of the plurality of trenches and along the portion of the gate spacer layer.
Claims20
A method, comprising:
- providing a device structure including a plurality of trenches;
- forming a gate spacer layer over the device structure;
- removing the gate spacer layer from a top surface of the device structure and selective to a first section of a sidewall of each of the plurality of trenches to expose the sidewall, wherein a portion of the gate spacer layer remains along a second section of the sidewall in a lower section of each of the plurality of trenches;
- forming a gate oxide layer along the first section of the sidewall of each of the plurality of trenches and along the portion of the gate spacer layer;
- and
- forming a gate material within the lower section of each of the plurality of trenches, wherein the gate spacer layer is removed prior to formation of the gate material.
A method of forming a MOSFET, comprising:
- providing a device structure including a plurality of trenches;
- forming a gate spacer layer over the device structure including within the plurality of trenches;
- etching the device structure to remove the gate spacer layer selective to a top surface of the device structure and selective to an upper section of a sidewall of each of the plurality of trenches to expose the sidewall, wherein a portion of the gate spacer layer remains along a lower section of each of the plurality of trenches;
- forming a gate oxide layer along the upper section of the sidewall of each of the plurality of trenches and along the portion of the gate spacer layer;
- and
- forming a gate material over the gate oxide layer, wherein the gate material is formed within the lower section of each of the plurality of trenches, and wherein the gate spacer layer is removed prior to formation of the gate material.
A method of forming a semiconductor device, comprising:
- forming a gate spacer layer within a plurality of trenches of a device structure;
- removing the gate spacer layer selective to an upper section of a sidewall of each of the plurality of trenches to expose the sidewall, wherein a portion of the gate spacer layer remains along a lower section of the sidewall in a lower section of each of the plurality of trenches;
- forming a gate oxide layer along the upper section of the sidewall of each of the plurality of trenches and along the portion of the gate spacer layer;
- and
- forming a gate material over the gate oxide layer, wherein the gate material is formed within the lower section of each of the plurality of trenches, and wherein the gate spacer layer is removed prior to formation of the gate material.
Dependencies are inferred from the claim text.