Method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHidetoshi Koyama
Life of this patent
Estimating the term…
Abstract
A source electrode (5), a drain electrode (6) and a T-shaped gate electrode (9) are formed on a GaN-based semiconductor layer (3,4) to form a transistor. An insulating film (10,11) covering the T-shaped gate electrode (9) is formed. A property of the transistor is evaluated to obtain an evaluation result. A film type, a film thickness or a dielectric constant of the insulating film (10,11) is adjusted in accordance with the evaluation result to make a property of the transistor close to a target property.
Claims12
A method for manufacturing a semiconductor device comprising:
- forming a source electrode, a drain electrode and a T-shaped gate electrode on a GaN-based semiconductor layer to form a transistor;
- forming an insulating film covering the T-shaped gate electrode;
- after forming the insulating film, evaluating a property of the transistor to obtain an evaluation result of the property of the transistor, the evaluation result of the property being different from a target property of the transistor;
- and
- adjusting a film type, a film thickness or a dielectric constant of the insulating film in accordance with the evaluation result to make the property of the transistor close to the target property, wherein
- in evaluating the property of the transistor, a small signal gain, a transconductance, a gate-source capacity, a gate-drain capacity, a drain-source capacity, or a source inductance is evaluated.
A method for manufacturing a semiconductor device comprising:
- forming a source electrode, a drain electrode and a T-shaped gate electrode on a GaN-based semiconductor layer to form a transistor;
- forming an insulating film covering the T-shaped gate electrode;
- after forming the insulating film, evaluating a property of the transistor to obtain an evaluation result of the property of the transistor, the evaluation result of the property being different from a target property of the transistor;
- and
- adjusting a film type, a film thickness or a dielectric constant of the insulating film in accordance with the evaluation result to make the property of the transistor close to the target property, wherein
- in evaluating the property of the transistor, a pinch-off property, a gate-source withstand voltage, a gate-drain withstand voltage, or a pulse IV property is evaluated.
Dependencies are inferred from the claim text.