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US 11,538,918 B2Granted
Electronic device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong Heo, Yunseong Lee, Sanghyun Jo, Keunwook Shin, Hyeonjin Shin
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Abstract
Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.
Claims19
An electronic device comprising:
- a channel element, the channel element being a channel layer on the substrate and separate from the substrate;
- a gate electrode on the channel element;
- a ferroelectric layer between the channel element and the gate electrode;
- and
- a carbon layer between the channel element and the ferroelectric layer, the carbon layer having an sp2 bonding structure, the carbon layer including nanocrystalline graphene including nano-sized crystals.
2 more elements
An electronic device comprising:
- a substrate;
- a channel element, the channel element being a channel layer on the substrate and separate from the substrate, or the channel element being a protruding portion of the substrate where a material of the protruding portion of the substrate is the same as a material of the substrate;
- a source and a drain connected to opposite ends of the channel element;
- a gate electrode on the channel element;
- a ferroelectric layer between the channel element and the gate electrode;
- and
- a carbon layer between the channel element and the ferroelectric layer,
- the carbon layer configured to limit diffusion of at least one of metal or oxygen from the ferroelectric layer into the channel element,
- the carbon layer having an sp2 bonding structure, and
- the carbon layer including nanocrystalline graphene including nano-sized crystals.
7 more elements
Dependencies are inferred from the claim text.