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US 11,538,917 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsHui-Hsin Hsu, Huan-Chi Ma, Chien-Wen Yu, Shih-Min Chou, Nien-Ting Ho, Ti-Bin Chen
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Abstract
A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer and a titanium aluminide layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer.
Claims17
A semiconductor device, comprising:
- a substrate;
- and
- a gate structure disposed on the substrate, wherein the gate structure comprises:
- a titanium nitride barrier layer;
- a titanium aluminide layer disposed on the titanium nitride barrier layer, wherein a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer;
- and
- a middle layer disposed between the titanium aluminide layer and the titanium nitride barrier layer, wherein the middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer comprises titanium and nitrogen,
- wherein a concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.
5 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a gate structure on a substrate, wherein the gate structure comprises:
- a titanium nitride barrier layer;
- and
- a titanium aluminide layer disposed on the titanium nitride barrier layer, wherein a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer,
- wherein the step of forming the gate structure comprises:
- forming a titanium nitride layer on the substrate;
- and
- forming a titanium layer on the titanium nitride layer, wherein a thickness of the titanium layer is greater than a thickness of the titanium nitride layer, and at least a part of the titanium nitride layer becomes the titanium nitride barrier layer after the titanium layer is formed.
5 more elements
A semiconductor device, comprising:
- a substrate;
- and
- a gate structure disposed on the substrate, wherein the gate structure comprises:
- a titanium nitride barrier layer;
- and
- a titanium aluminide layer disposed on the titanium nitride barrier layer, wherein a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer,
- wherein the titanium nitride barrier layer directly contacts the titanium aluminide layer, and a concentration of nitrogen in a top portion of the titanium nitride barrier layer is gradually decreased in a vertical direction towards an interface between the titanium nitride barrier layer and the titanium aluminide layer.
4 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a gate structure on a substrate, wherein the gate structure comprises:
- a titanium nitride barrier layer;
- and
- a titanium aluminide layer disposed on the titanium nitride barrier layer, wherein a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer,
- wherein the step of forming the gate structure comprises:
- forming a titanium nitride layer on the substrate;
- and
- forming a titanium layer on the titanium nitride layer, wherein a thickness of the titanium layer is greater than a thickness of the titanium nitride layer,
- wherein a middle layer is formed between the titanium nitride barrier layer and the titanium layer, the middle layer is directly connected with the titanium layer and the titanium nitride barrier layer, and the middle layer comprises titanium and nitrogen.
6 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a gate structure on a substrate, wherein the gate structure comprises:
- a titanium nitride barrier layer;
- and
- a titanium aluminide layer disposed on the titanium nitride barrier layer, wherein a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer,
- wherein the step of forming the gate structure comprises:
- forming a titanium nitride layer on the substrate;
- forming a titanium layer on the titanium nitride layer, wherein a thickness of the titanium layer is greater than a thickness of the titanium nitride layer;
- forming an aluminum layer on the titanium layer;
- and
- performing a reflow process after the step of forming the aluminum layer, wherein the titanium layer and a portion of the aluminum layer is converted into the titanium aluminide layer after the reflow process.
7 more elements
Dependencies are inferred from the claim text.