Method of forming semiconductor structure
AssigneeNanya Technology Corporation
InventorsSheng-Hwa Lee, Hsiu-Ming Chen
Life of this patent
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Abstract
A method of forming a semiconductor structure includes following steps. A first isolation is formed between a pair of active regions. A gate structure is formed on the first isolation structure. The active regions are etched to form recesses with curved top surfaces. The active regions are etched again to change each of the curved top surfaces to be a top surface and a sidewall substantially perpendicular to the top surface. A pair of contacts is formed respectively on the active regions, such that each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.
Claims5
A method of forming a semiconductor structure, comprising:
- forming a first isolation structure between a pair of active regions;
- forming a gate structure on the first isolation structure;
- etching the active regions to form recesses with curved top surfaces;
- etching the active regions again to change each of the curved top surfaces to be a top surface and a sidewall substantially perpendicular to the top surface;
- and
- forming a pair of contacts respectively on the active regions, such that each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.
Dependencies are inferred from the claim text.