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US 11,538,910 B2Granted
Field-effect transistors of semiconductor devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorBong Woong Mun
Life of this patent
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Abstract
A semiconductor device is provided, which includes a substrate, a first and second doped wells, a drain and source regions, a gate structure, a field plate and a booster plate. The first and second doped wells are arranged in the substrate. The drain region is arranged in the first doped well and the source region is arranged in the second doped well. The gate structure is arranged over the substrate and between the source and drain regions. The field plate is arranged over the first doped well and the booster plate arranged between the field plate and the first doped well.
Claims12
A semiconductor device comprising:
- a substrate;
- a first doped well and a second doped well in the substrate;
- a drain region in the first doped well and a source region in the second doped well;
- a dielectric layer over the substrate;
- a gate structure in the dielectric layer and between the source region and drain region;
- a field plate over the first doped well;
- a booster plate having a planar structure with a uniform thickness between the field plate and the first doped well, wherein the booster plate is spaced apart from the first doped well by the dielectric layer;
- and
- an insulation layer between the substrate and the booster plate.
6 more elements
Dependencies are inferred from the claim text.