Semiconductor memory device and method of manufacturing the same
AssigneeKioxia Corporation
InventorMasakazu Goto
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes first conducting layers and a first semiconductor layer opposed to the first conducting layers. If a concentration of the dopant in the first semiconductor layer is measured along an imaginary straight line, the concentration of the dopant has: a maximum value at a first point, a minimum value in a region closer to the first conducting layer than the first point at a second point; and a minimum value in a region farther from the first conducting layer than the first point at a third point. The second point is nearer to an end portion of the first semiconductor layer on the first conducting layer side than that on the opposite side. The third point is farther from the end portion on the first conducting layer side than that on the opposite side.
Claims5
A semiconductor memory device comprising:
- a substrate;
- a plurality of first conducting layers arranged in a first direction that intersects with a surface of the substrate;
- a first semiconductor layer extending in the first direction, the first semiconductor layer being opposed to the plurality of first conducting layers in a second direction that intersects with the first direction and containing a dopant;
- and
- memory cells disposed at intersecting portions between the first conducting layers and the first semiconductor layer, wherein
- the first semiconductor layer contains crystal grains of 100 nm or more in size,
- when a concentration of the dopant in the first semiconductor layer is measured along an imaginary straight line that extends in the second direction,
- a point on the imaginary straight line at which the concentration of the dopant has a maximum value is defined as a first point,
- a point on the imaginary straight line at which the concentration of the dopant has a minimum value in a region closer to the first conducting layer than the first point is defined as a second point, and
- a point on the imaginary straight line at which the concentration of the dopant has a minimum value in a region farther from the first conducting layer than the first point is defined as a third point, wherein
- a distance from the second point to an end portion of the first semiconductor layer on the first conducting layer side is smaller than a distance from the second point to an end portion of the first semiconductor layer on an opposite side of the first conducting layer, and
- a distance from the third point to the end portion of the first semiconductor layer on the first conducting layer side is greater than a distance from the third point to the end portion of the first semiconductor layer on the opposite side of the first conducting layer.
Dependencies are inferred from the claim text.