Semiconductor device and manufacturing method thereof
AssigneePowerchip Semiconductor Manufacturing Corporation
InventorsChing-Sung Ho, Jia-Horng Tsai
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Abstract
A semiconductor device including a substrate and a capacitor is provided. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is located on the substrate. The first electrode has a plurality of hemispherical recesses. The second electrode is located on the first electrode. The insulating layer is located between the first electrode and the second electrode. Surfaces of the hemispherical recesses are in direct contact with the insulating layer.
Claims8
A method for manufacturing a semiconductor device, comprising:
- providing a substrate;
- and
- forming a capacitor on the substrate, wherein the capacitor comprises:
- a first electrode, located on the substrate, wherein the first electrode has a plurality of hemispherical recesses;
- a second electrode, located on the first electrode;
- and
- an insulating layer, located between the first electrode and the second electrode, wherein surfaces of the hemispherical recesses are in direct contact with the insulating layer, and
- the semiconductor device comprises a plurality of capacitors, and further comprises:
- a support structure, connected between adjacent two of the first electrodes of adjacent two of the capacitors, wherein the support structure comprises:
- a first support layer, connected between adjacent two of the first electrodes of adjacent two of the capacitors, wherein a bottom surface of the first electrode is lower than a bottom surface of the first support layer;
- and
- a second support layer, connected between adjacent two of the first electrodes of adjacent two of the capacitors, wherein the first support layer is located between the second support layer and the substrate.
A semiconductor device, comprising:
- a substrate;
- and
- a capacitor, comprising:
- a first electrode, located on the substrate, wherein the first electrode has a plurality of hemispherical recesses;
- a second electrode, located on the first electrode;
- and
- an insulating layer, located between the first electrode and the second electrode, wherein surfaces of the hemispherical recesses are in direct contact with the insulating layer, and
- the semiconductor device comprises a plurality of capacitors, and further comprises:
- a support structure, connected between adjacent two of the first electrodes of adjacent two of the capacitors, wherein the support structure comprises:
- a first support layer, connected between adjacent two of the first electrodes of adjacent two of the capacitors, wherein a bottom surface of the first electrode is lower than a bottom surface of the first support layer;
- and
- a second support layer, connected between adjacent two of the first electrodes of adjacent two of the capacitors, wherein the first support layer is located between the second support layer and the substrate.
Dependencies are inferred from the claim text.