US 11,538,882 B2Granted

Display device

AssigneeSamsung Display Co., Ltd.

InventorsYoon-Jong Cho, Seok Je Seong, Seong Jun Lee

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Abstract

A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.

Claims17

Dependent claims

A display device comprising:

a driving transistor disposed on a substrate;
a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of the driving transistor;
a gate electrode of the driving transistor positioned on the channel of the driving transistor;
a first storage electrode positioned on the gate electrode of the driving transistor;
a light blocking layer of a first transistor and a light blocking layer of a second transistor positioned on the substrate;
an oxide semiconductor including:
a channel, a first electrode, and a second electrode of the first transistor positioned on the light blocking layer of the first transistor;
and
a channel, a first electrode, and a second electrode of the second transistor positioned on the light blocking layer of the second transistor;
a gate electrode of the first transistor positioned on the channel of the first transistor;
and
a gate electrode of the second transistor positioned on the channel of the second transistor, wherein
the channel of the first transistor is disposed between the light blocking layer of the first transistor and the gate electrode of the first transistor,
the channel of the second transistor is disposed between the light blocking layer of the second transistor and the gate electrode of the second transistor,
the light blocking layer of the first transistor and the first storage electrode are positioned on a same layer,
the light blocking layer of the second transistor and the gate electrode of the driving transistor are positioned on a same layer,
the light blocking layer of the first transistor and the light blocking layer of the second transistor are positioned on different layers, and
the gate electrode of the first transistor and the gate electrode of the second transistor are positioned on a same layer.

15 more elements

A display device comprising:

a driving transistor disposed on a substrate;
a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of the driving transistor;
a gate electrode of the driving transistor positioned on the channel of the driving transistor;
a first storage electrode positioned on the gate electrode of the driving transistor;
a light blocking layer of a first transistor and a light blocking layer of a second transistor positioned on the substrate;
an oxide semiconductor including:
a channel, a first electrode, and a second electrode of the first transistor positioned on the light blocking layer of the first transistor;
and
a channel, a first electrode, and a second electrode of the second transistor positioned on the light blocking layer of the second transistor;
a gate electrode of the first transistor positioned on the channel of the first transistor;
and
a gate electrode of the second transistor positioned on the channel of the second transistor, wherein
an inverted scan signal is applied to the light blocking layer of the first transistor and the gate electrode of the first transistor,
a first emission control signal is applied to the light blocking layer of the second transistor and the gate electrode of the second transistor,
the channel of the first transistor is disposed between the light blocking layer of the first transistor and the gate electrode of the first transistor,
the channel of the second transistor is disposed between the light blocking layer of the second transistor and the gate electrode of the second transistor,
the gate electrode of the first transistor and the gate electrode of the second transistor are positioned on a same layer, and
the light blocking layer of the first transistor and the light blocking layer of the second transistor are positioned on different layers.

15 more elements

A display device comprising:

a light emitting diode electrically connected between a driving voltage line that transmits a driving voltage and a common voltage line that transmits a common voltage;
a driving transistor electrically connected between the driving voltage line and the light emitting diode;
a first transistor electrically connected between a first electrode of the driving transistor electrically connected to the driving voltage line and a data line that transmits a data voltage;
a second transistor electrically connected between a second electrode of the driving transistor electrically connected to the light emitting diode and a gate electrode of the driving transistor;
a third transistor electrically connected between the light emitting diode and an initialization voltage line that transmits an initialization voltage;
a storage capacitor electrically connected between the driving voltage line and the gate electrode of the driving transistor;
a boost capacitor electrically connected between a gate electrode of the first transistor and a gate electrode of the driving transistor,
a fourth transistor and a fifth transistor electrically connected between the driving voltage line and the first electrode of the driving transistor;
a sixth transistor electrically connected between the second electrode of the driving transistor and the light emitting diode;
a seventh transistor electrically connected between a gate electrode of the fourth transistor and the second electrode of the driving transistor;
a first emission control signal line electrically connected to the gate electrode of the fourth transistor and a gate electrode of the third transistor, and receiving a first emission control signal;
a second emission control signal line electrically connected to a gate electrode of the sixth transistor and a gate electrode of the fifth transistor, and receiving a second emission control signal;
and
a third emission control signal line electrically connected to a gate electrode of the seventh transistor, and receiving a third emission control signal, wherein
the driving transistor includes a polycrystalline semiconductor, and
the second transistor and the third transistor include oxide semiconductors.

13 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/997,385Filed 19 Aug 2020
Priority: KR 10-2020-002359126 Feb 2020
Published: US 2021/0265442 A126 Aug 2021
Granted: 27 Dec 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification23 codes

G09G 3/3233
Using an active matrix: with pixel circuitry controlling the current through the light-emitting element
H10K 59/1213
Characterised by the geometry or disposition of pixel elements: the pixel elements being TFTs
H10K 59/126
Active-matrix OLED [AMOLED] displays: shielding, e.g. light-blocking means over the TFTs
G09G 3/3208
Semiconductive, e.g. using light-emitting diodes [LED]: organic, e.g. using organic light-emitting diodes [OLED]