Variable resistance memory device

A variable resistance memory device, comprising:

• a plurality of first conductive lines extending in a first direction, the first direction being parallel to a lengthwise direction of each of the plurality of first conductive lines and being parallel to a top surface of a substrate;
• a plurality of second conductive lines spaced apart in a second direction from the plurality of first conductive lines, the second direction being parallel to the top surface of the substrate and different from the first direction,
• the plurality of second conductive lines extending in a third direction, the third direction being parallel to a lengthwise direction of each of the plurality of second conductive lines and being perpendicular to the top surface of the substrate, the plurality of second conductive lines being spaced apart from each other in the first direction,
• the plurality of first conductive lines being spaced apart from each other in the third direction;
• and
• a plurality of memory cells disposed between the plurality of first conductive lines and the plurality of second conductive lines and arranged spaced apart from each other in the first direction and the third direction,
• wherein each of the memory cells including a variable resistance element and a select element that are horizontally arranged in the second direction,
• wherein each of the plurality of second conductive lines is connected in common to a corresponding vertical group of the plurality of memory cells, the corresponding vertical group including at least two memory cells being spaced apart from each other in the third direction, and
• wherein each of the at least two memory cells of the corresponding vertical group is connected to a corresponding one of the plurality of first conductive lines.