Memory array with graded memory stack resistances

A method, comprising:

• forming, on a memory layer coupled with a word line driver and a bit line driver, a first set of memory stacks having first electrical distances that are less than or equal to a first threshold electrical distance, each memory stack of the first set of memory stacks having a first resistance that is greater than a first threshold resistance;
• forming, on the memory layer, a second set of memory stacks having second electrical distances that are greater than the first threshold electrical distance, each memory stack of the second set of memory stacks having a second resistance that is less than the first threshold resistance, wherein the first electrical distances and the second electrical distances are based on a respective distance from at least one of the word line driver or the bit line driver, and wherein the second electrical distances are less than or equal to a second threshold electrical distance;
• forming, on the memory layer, a third set of memory stacks having third electrical distances that are greater than the second threshold electrical distance and less than or equal to a third threshold electrical distance, wherein each memory stack of the third set of memory stacks has a third resistance that is less than the second resistance;
• and
• forming, on the memory layer, a fourth set of memory stacks having fourth electrical distances that are greater than the third threshold electrical distance, wherein each memory stack of the fourth set of memory stacks has a fourth resistance that is less than the third resistance, and wherein the third electrical distances and the fourth electrical distances are based on a respective distance from at least one of the word line driver or the bit line driver.

A method, comprising:

• forming, on a memory layer coupled with a first driver and a second driver, a first memory stack having, prior to storing information, a first resistance based at least in part on a first electrical distance of the first memory stack, the first electrical distance based at least in part on a first distance between the first memory stack and at least one of the first driver or the second driver, wherein forming the first memory stack comprises forming:
• a first bit line layer coupled with the second driver,
• a first resistive layer in contact with the first bit line layer,
• a reduced-conductivity electrode layer in contact with the first resistive layer, and
• a first electrode layer in contact with the reduced-conductivity electrode layer;
• and
• forming, on the memory layer, a second memory stack having, prior to storing information, a second resistance that is less than the first resistance based at least in part on a second electrical distance of the second memory stack that is greater than the first electrical distance, the second electrical distance based at least in part on a second distance between the second memory stack and at least one of the first driver or the second driver, wherein forming the first memory stack comprises forming:
• a second bit line layer coupled with the second driver,
• a second resistive layer in contact the second bit line layer, and
• a second electrode layer in contact with the second resistive layer.

A method, comprising:

• forming, on a memory layer coupled with a first driver and a second driver, a first memory stack comprising a first storage component and having a first resistance based at least in part on a first distance between the first memory stack and at least one of the first driver or the second driver, wherein the first resistance is based at least in part on the first storage component being configured in a first state, wherein forming the first memory stack comprises forming:
• a first bit line layer coupled with the second driver,
• a first resistive layer in contact with the first bit line layer,
• a reduced-conductivity electrode layer in contact with the first resistive layer, and
• a first electrode layer in contact with the reduced-conductivity electrode layer;
• and
• forming, on the memory layer, a second memory stack comprising a second storage component and having a second resistance lower than the first resistance based at least in part on a second distance between the second memory stack and at least one of the first driver and the second driver, wherein the second resistance is based at least in part on the second storage component being configured in the first state, wherein forming the second memory stack comprises forming:
• a second bit line layer coupled with the second driver,
• a second resistive layer in contact with the second bit line layer, and
• a second electrode layer in contact with the second resistive layer.