Image sensing device
AssigneeSK hynix Inc.
InventorMin Su Cho
Life of this patent
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Abstract
An image sensing device is provided to include a semiconductor substrate configured to include a photoelectric conversion element that generates photocharges in response to light incident to the photoelectric conversion element, a plurality of microlenses disposed over the semiconductor substrate and configured to allow the incident light to converge upon the photoelectric conversion element, and a polarization structure disposed between the semiconductor substrate and the microlenses and configured to transmit light of a polarization oriented in a specific direction to the photoelectric conversion element, wherein the polarization structure includes one or more air layers.
Claims18
An image sensing device, comprising:
- a semiconductor substrate configured to include photoelectric conversion elements that generate photocharges in response to light incident to the photoelectric conversion element;
- a plurality of microlenses disposed over the semiconductor substrate and configured to allow the incident light to converge upon the photoelectric conversion elements;
- and
- a polarization structure disposed between the semiconductor substrate and the microlenses and configured to transmit light of a polarization oriented in a specific direction to the photoelectric conversion elements,
- wherein the polarization structure includes wires including an air layer, wherein the wires include:
- a plurality of first wires extending in a first direction and disposed in a second direction perpendicular to the first direction at intervals of a first distance;
- and
- a plurality of second wires extending in the second direction and disposed in the first direction at intervals of a second distance, the plurality of the second wires coupled to the plurality of first wires.
An image sensing device comprising:
- a pixel array in which a plurality of unit pixels are arranged in a first direction and a second direction perpendicular to the first direction and configured to output a pixel signal corresponding to photocharges generated in response to incident light,
- wherein the pixel array includes:
- a photoelectric conversion element configured to generate the photocharges in response to the incident light;
- and
- a polarization structure disposed over the photoelectric conversion element, and configured to transmit a polarized light oriented in a specific direction among the incident light to the photoelectric conversion element,
- wherein the polarization structure includes one or more air layers,
- wherein the polarization structure includes:
- a plurality of first wires extending in the first direction, and disposed in the second direction at intervals of a first period;
- and
- a plurality of second wires extending in the second direction and disposed in the first direction at intervals of a second period shorter than the first period, the plurality of second wires being coupled to the plurality of first wires.
An image sensing device, comprising:
- a semiconductor substrate configured to include a photoelectric conversion element that generates photocharges in response to light incident to the photoelectric conversion element;
- a plurality of microlenses disposed over the semiconductor substrate and configured to allow the incident light to converge upon the photoelectric conversion element;
- and
- a polarization structure disposed between the semiconductor substrate and the microlenses and configured to transmit light of a polarization oriented in a specific direction to the photoelectric conversion element,
- wherein the polarization structure includes one or more air layers, and
- wherein the image sensing device further comprises:
- a planarization layer formed over the polarization structure and under the plurality of microlenses.
Dependencies are inferred from the claim text.