Color filters disposed in holes of a light collimator, manufacturing method of the same and biometric identification apparatus using the same

A manufacturing method of a semiconductor device, comprising:

• forming a light-shielding material on a transparent substrate;
• patterning the light-shielding material to form a patterned light-shielding layer having a plurality of holes, wherein the transparent substrate and the patterned light-shielding layer define an individual light-collimating unit;
• forming a plurality of the individual light-collimating units;
• forming a plurality of color filter layers in the holes, wherein the color filter layers is made of a first material, the transparent substrate is made of a second material different from the first material;
• stacking the individual light-collimating units on each other and encapsulating the individual light-collimating units stacked on each other to form an encapsulation structure;
• and
• forming the encapsulation structure on a conductive substrate, wherein the conductive substrate has a plurality of pixels, and the holes are disposed to correspond to the pixels, wherein the transparent substrate of a bottommost one of the individual light-collimating units of the encapsulation structure is in contact with the conductive substrate.

A biometric identification apparatus, comprising:

• a semiconductor device, comprising:
• a conductive substrate having a plurality of pixels;
• and
• an encapsulation structure disposed on the conductive substrate and comprising a plurality of individual light-collimating units, wherein the individual light-collimating units are encapsulated together, wherein each of the individual light-collimating units comprises:
• a transparent substrate;
• a patterned light-shielding layer disposed on the transparent substrate and having a plurality of holes disposed to correspond to the pixels, wherein the transparent substrate of a bottommost one of the individual light-collimating units of the encapsulation structure is in contact with the conductive substrate;
• and
• a plurality of first color filter layers disposed in the holes, wherein the first color filter layers is made of a first material, the transparent substrate is made of a second material different from the first material;
• a light source layer disposed on the semiconductor device;
• and
• a cover plate disposed on the light source layer.