Semiconductor imaging device having improved dark current performance

An image sensor, comprising:

• a first pixel sensor comprising a first floating diffusion node and at least one photodetector, wherein the first floating diffusion node is disposed in a substrate;
• a second pixel sensor comprising a second floating diffusion node and at least one photodetector, wherein the second floating diffusion node is disposed in the substrate and spaced from the first floating diffusion node;
• a pick-up well contact region disposed in the substrate, wherein the pick-up well contact region is disposed laterally between the first floating diffusion node and the second floating diffusion node, and wherein the first floating diffusion node, the second floating diffusion node, and the pick-up well contact region are disposed in a column that extends laterally in a first direction;
• and
• a pixel device region comprising an image processing device, wherein the pixel device region and the pick-up well contact region are disposed in a row that extends laterally in a second direction perpendicular to the first direction.

An image sensor, comprising:

• a plurality of pixel sensors, wherein the pixel sensors comprise floating diffusion nodes, respectively, wherein the floating diffusion nodes are disposed in a substrate, and wherein the floating diffusion nodes are disposed in a first array comprising a first set of rows that extend in a first direction and a first set of columns that extend in a second direction perpendicular to the first direction;
• a plurality of pick-up well contact regions disposed in the substrate, wherein:
• the pick-up well contact regions are disposed in a second array comprising a second set of rows that extend in the first direction and a second set of columns that extend in the second direction;
• the first array and the second array are aligned in the first direction, such that the first set of columns are aligned with the second set of columns, respectively, in the first direction;
• the second array is shifted in the second direction in relation to the first array, such that the first set of rows and the second set of rows alternate back and forth in the second direction;
• and
• a plurality of pixel device regions, wherein each of the pixel device regions comprise at least one image processing device, wherein the plurality of pixel device regions are disposed in a third set of rows, and wherein the third set of rows are aligned with the second set of rows, respectively, in the second direction.