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US 11,538,829 B2Granted
Memory device with first switch and word line switches comprising a common control electrode and manufacturing method for the same
AssigneeMacronix International Co., Ltd.
InventorErh-Kun Lai
Life of this patent
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Abstract
A memory device and a manufacturing for the same are provided. The memory device comprises a channel line, word lines, a first switch, and a second switch. Memory cells for a memory string are defined at intersections between the channel line and the word lines. The first switch is electrically connected with the channel line. The second switch is electrically connected with the channel line. The first switch is electrically connected between the second switch and the memory cells.
Claims18
A memory device, comprising:
- a channel line;
- word lines, wherein memory cells for a memory string are defined at intersections between the channel line and the word lines;
- a first switch electrically connected with the channel line;
- and
- a second switch electrically connected with the channel line, wherein the first switch is electrically connected between the second switch and the memory cells;
- and word line switches respectively electrically connected with the word lines, wherein the first switch and the word line switches comprise a common control electrode.
3 more elements
Dependencies are inferred from the claim text.