Three-dimensional memory device with increased memory cell density
AssigneeMacronix International Co., Ltd.
InventorChih-Hsiung Lee
Life of this patent
Estimating the term…
Abstract
A memory device and method of forming the same are provided. The memory device includes a word line, a bit line, a source line, a channel pillar, and a charge storage structure. The bit line and the source line are disposed on opposite sides of the word line in a vertical direction. The channel pillar penetrates through and is connected to the word line, the bit line and the source line. The charge storage structure surrounds a top surface and a bottom surface of the word line and is laterally sandwiched between the channel pillar and the word line. The channel pillar completely penetrates through and is laterally surrounded by the bit line.
Claims16
A memory device, comprising:
- a word line;
- a bit line and a source line disposed on opposite sides of the word line in a vertical direction;
- a channel pillar, penetrating through and connected to the word line, the bit line and the source line;
- a charge storage structure, surrounding a top surface and a bottom surface of the word line and laterally sandwiched between the channel pillar and the word line;
- and
- a first block and a second block separated from each other by a plurality of insulating pillars and insulating structures alternatively arranged along a first direction,
- wherein the channel pillar completely penetrates through and is laterally surrounded by the bit line,
- wherein the bit line includes a body portion and a protrusion laterally protruding from sidewalls of the body portion.
A memory device, comprising:
- a word line;
- a bit line and a source line disposed on a top side and a bottom side of the word line;
- a channel pillar, penetrating through and connected to the word line, the bit line and the source line;
- a charge storage structure laterally sandwiched between the channel pillar and the word line;
- and
- an insulating post, laterally surrounded by the word line,
- wherein the channel pillar completely penetrates through and is laterally surrounded by the bit line,
- wherein the bit line extends along a first direction, and has a first width and a second width in a second direction perpendicular to the first direction, wherein a width of the channel pillar is larger than the first width of the bit line and less than the second width of the bit line.
Dependencies are inferred from the claim text.