Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies

A method of forming an integrated assembly, comprising:

• forming a stack of alternating first and second materials over a conductive structure;
• the conductive structure comprising a semiconductor-containing material over a metal-containing material;
• forming a trench to extend through the stack;
• at least some regions of the trench passing through the semiconductor-containing material and into the metal-containing material;
• lining only bottom regions of the trench with a third material;
• the third material being a different composition than the metal-containing material and comprising one or more of cobalt, molybdenum, nickel, ruthenium, tantalum, titanium and tungsten;
• removing the second material of the stack to form voids;
• forming conductive material within the voids, the conductive material forming conductive levels of a NAND assembly;
• forming an insulative partition within the trench;
• the insulative partition dividing the NAND assembly into sub-blocks;
• wherein an entirety of the semiconductor-containing material is over the metal-containing material;
• and
• wherein the third material is a single layer of material directly against a side surface of the semiconductor-containing material and directly against an upper surface of the metal-containing material.