Non-volatile memory cell arrays with a sectioned active region and methods of manufacturing thereof

A structure comprising:

• a substrate including an active region, the active region including a first section having a first side edge and a second section extending laterally from the first side edge, the first section having a first length dimension in a direction parallel to the first side edge, the second section having a second length dimension in the direction parallel to the first side edge, and the second length dimension less than the first length dimension;
• a first fin positioned on the substrate in the second section of the active region;
• a plurality of second fins on the substrate in the first section of the active region;
• and
• a first gate structure that extends over the first fin, the plurality of second fins, and the second section of the active region;
• a semiconductor layer on the first fin and the plurality of second fins;
• and
• a contact coupled with the semiconductor layer,
• wherein the contact is positioned over the plurality of second fins and not over the first fin.

A method comprising:

• forming a trench isolation region in a substrate to define a boundary for an active region, wherein the active region includes a first section having a first side edge and a second side edge opposite to the first side edge, a second section extending laterally from the first side edge, and a third section extending laterally from the second side edge, the second section of the active region is centered along the first side edge of the first section of the active region, the first section has a first length dimension in a direction parallel to the first side edge, the second section has a second length dimension in the direction parallel to the first side edge, and the second length dimension is less than the first length dimension;
• forming a first fin positioned on the substrate in the first section of the active region, the second section of the active region, and the third section of the active region;
• and
• forming a first gate structure that extends over the first fin and the second section of the active region.