Gate-all-around integrated circuit structures having high mobility

An integrated circuit structure, comprising:

• a vertical arrangement of silicon nanowires above a fin;
• an N-type gate stack around the vertical arrangement of silicon nanowires, the N-type gate stack comprising a compressively stressing gate electrode;
• a first N-type epitaxial source or drain structure at a first end of the vertical arrangement of silicon nanowires;
• and
• a second N-type epitaxial source or drain structure at a second end of the vertical arrangement of silicon nanowires, wherein each nanowire of the vertical arrangement of silicon nanowires has a top surface above the fin, the top surface having a <110> plane between the first N-type epitaxial source or drain structure and the second N-type epitaxial source or drain structure.

An integrated circuit structure, comprising:

• a silicon nanoribbon above a substrate;
• an N-type gate stack around the silicon nanoribbon, the N-type gate stack comprising a compressively stressing gate electrode;
• a first N-type epitaxial source or drain structure at a first end of the silicon nanoribbon;
• and
• a second N-type epitaxial source or drain structure at a second end of the silicon nanoribbon, wherein the silicon nanoribbon has a top surface above the substrate, the top surface having a <110> plane between the first N-type epitaxial source or drain structure and the second N-type epitaxial source or drain structure.

An integrated circuit structure, comprising:

• a vertical arrangement of silicon nanowires above a fin;
• an N-type gate stack around the vertical arrangement of silicon nanowires, the N-type gate stack comprising a compressively stressing gate electrode;
• a first N-type epitaxial source or drain structure at a first end of the vertical arrangement of silicon nanowires;
• a second N-type epitaxial source or drain structure at a second end of the vertical arrangement of silicon nanowires, wherein each nanowire of the vertical arrangement of silicon nanowires has a top surface having a <110> plane between the first N-type epitaxial source or drain structure and the second N-type epitaxial source or drain structure;
• a first conductive contact structure coupled to the first N-type epitaxial source or drain structure;
• and
• a second conductive contact structure coupled to the second N-type epitaxial source or drain structure, the second conductive contact structure deeper along the fin than the first conductive contact structure.