Stacked integration of III-N transistors and thin-film transistors
AssigneeIntel Corporation
InventorsHan Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Walid M. Hafez
Life of this patent
Estimating the term…
Loading patent…
AssigneeIntel Corporation
InventorsHan Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Walid M. Hafez
Estimating the term…
Disclosed herein are integrated circuit (IC) structures, packages, and devices that include thin-film transistors (TFTs) integrated on the same substrate/die/chip as III-N transistors. One example IC structure includes an III-N transistor in a first layer over a support structure (e.g., a substrate) and a TFT in a second layer over the support structure, where the first layer is between the support structure and the second layer. Another example IC structure includes a III-N semiconductor material and a TFT, where at least a portion of a channel material of the TFT is over at least a portion of the III-N semiconductor material.
An integrated circuit (IC) device, comprising:
An integrated circuit (IC) device, comprising:
Dependencies are inferred from the claim text.