US 11,538,803 B2 · Integration of III-V transistors in a silicon CMOS stack

Abstract

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment the semiconductor device comprises a first semiconductor layer, where first transistors are fabricated in the first semiconductor layer, and a back end stack over the first transistors. In an embodiment the back end stack comprises conductive traces and vias electrically coupled to the first transistors. In an embodiment, the semiconductor device further comprises a second semiconductor layer over the back end stack, where the second semiconductor layer is a different semiconductor than the first semiconductor layer. In an embodiment, second transistors are fabricated in the second semiconductor layer.

Claims15

Dependent claims

A semiconductor device, comprising:

a first semiconductor layer, wherein first transistors are fabricated in the first semiconductor layer;
a back end stack over the first transistors, wherein the back end stack comprises a plurality of alternating dielectric layers and layers of conductive traces, and the back end stack comprising conductive vias electrically coupled to the first transistors;
and
a second semiconductor layer over the back end stack, wherein the second semiconductor layer is a different semiconductor than the first semiconductor layer, and wherein second transistors are fabricated in the second semiconductor layer, wherein the back end stack is vertically between the first transistors and the second semiconductor layer.

1 more element

Dependencies are inferred from the claim text.

Integration of III-V transistors in a silicon CMOS stack

Life of this patent

Integration of III-V transistors in a silicon CMOS stack

Life of this patent

Abstract

Claims15