Semiconductor device including a switching element in a first element region and a diode element in a second element region

A semiconductor device comprising:

• a semiconductor chip unit including a first semiconductor chip which has a first main surface and a second main surface facing each other, a first switching element being formed in a first element region defined on the first main surface, and a first diode element being formed in a second element region defined on the first main surface;
• and
• a second semiconductor chip which has a third main surface and a fourth main surface facing each other, wherein a second switching element is formed in a third element region defined on the third main surface, and a second diode element is formed in a fourth element region defined on the third main surface,
• the first switching element including:
• a first emitter layer formed on the side of the first main surface;
• a first collector layer formed on the side of the second main surface;
• a first gate electrode formed on the side of the first main surface;
• and
• a first electrode film formed in contact with the first emitter layer,
• the first diode element including:
• a first anode layer formed on the side of the first main surface;
• a first cathode layer formed on the side of the second main surface;
• and
• a second electrode film formed in contact with the first anode layer,
• the second switching element including:
• a second emitter layer formed on the side of the third main surface;
• a second collector layer formed on the side of the fourth main surface;
• a second gate electrode formed on the side of the third main surface;
• and
• a third electrode film formed in contact with the second emitter layer,
• the second diode element including:
• a second anode layer formed on the side of the third main surface;
• a second cathode layer formed on the side of the fourth main surface;
• and
• a fourth electrode film formed in contact with the second anode layer,
• the first electrode film in the first switching element and the second electrode film in the first diode element being separated from each other by a distance,
• the third electrode film in the second switching element and the fourth electrode film in the second diode element being separated from each other by a distance,
• the first collector layer and the first cathode layer being electrically connected,
• the second collector layer and the second cathode layer being electrically connected,
• the semiconductor device further comprising a wiring conductor which includes a first wire that electrically connects the first electrode film of the first switching element and the fourth electrode film of the second diode element and a second wire that electrically connects the second electrode film of the first diode element and the third electrode film of the second switching element.

A semiconductor device comprising:

• a semiconductor chip which has a first main surface and a second main surface facing each other, a switching element being formed in a first element region defined on the first main surface, and a diode element being formed in a second element region defined on the first main surface,
• the switching element including:
• an emitter layer formed on the side of the first main surface;
• a collector layer formed on the side of the second main surface;
• and
• a gate electrode formed on the side of the first main surface,
• the diode element including:
• an anode layer formed on the side of the first main surface;
• and
• a cathode layer formed on the side of the second main surface,
• the semiconductor device further comprising:
• an electrode film formed directly on the first main surface and extending from the emitter layer to the anode layer and in direct contact with the emitter layer and the anode layer and arranged to cover the first main surface;
• and
• a wiring conductor electrically connected to the electrode film,
• the wiring conductor being connected to a position spaced by a distance from a portion of the electrode film located immediately above a boundary between the first element region and the second element region.