Semiconductor device

A semiconductor device comprising:

• a substrate including a surface facing in a first direction and a plurality of electrodes on the surface;
• a plurality of first stacked components including a plurality of first chips, the plurality of first stacked components being stacked on the surface;
• a plurality of first wires that connects the plurality of first chips and the plurality of electrodes;
• a plurality of second stacked components including a plurality of second chips, the plurality of second stacked components being stacked on the surface;
• a plurality of second wires that connects the plurality of second chips and the plurality of electrodes;
• and
• a coating resin that covers the surface, the plurality of first stacked components, the plurality of first wires, the plurality of second stacked components, and the plurality of second wires, the coating resin including an outer surface that faces in the first direction and is provided with a recess that forms a mark, wherein
• the plurality of first stacked components including the plurality of first chips each includes a first top surface facing in the first direction,
• the plurality of second stacked components including the plurality of second chips each includes a second top surface facing in the first direction,
• the first top surface of a second farthest one of the plurality of first chips away from the surface differs in position in the first direction from the second top surface of a second farthest one of the plurality of second chips away from the surface, and
• the recess is located on the outer surface outside a region lying over either of the first top surface and the second top surface in the first direction, whichever is farther from the surface, the first top surface being of a farthest one of the plurality of first stacked components away from the surface, and the second top surface being of a farthest one of the plurality of second stacked components away from the surface.