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US 11,538,775 B2Granted
Semiconductor device and method of manufacturing a semiconductor device
AssigneeLapis Semiconductor Co., Ltd.
InventorMasanori Shindo
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes wiring that is formed by a conductive body extending, via an insulating film, on a front surface of a semiconductor substrate, and an insulating layer that covers the front surface of the semiconductor substrate including the wiring. Gaps are provided extending from an upper surface of the wiring to a lower portion of the insulating film.
Claims19
A semiconductor device comprising:
- wiring that is formed by a conductive body extending, via an insulating film, on a front surface of a semiconductor substrate;
- and
- an insulating layer that covers the front surface of the semiconductor substrate including the wiring,
- wherein gaps are provided from an upper surface of the wiring to a lower portion of the insulating film to penetrate through both the wiring and the insulating film.
1 more element
A method of manufacturing a semiconductor device comprising:
- forming, on one surface of a semiconductor substrate, circuit elements that include first wiring, the circuit elements being connected by the first wiring to a pad;
- forming an insulating film on an upper portion of the circuit elements, and also forming apertures at the insulating film in an area of the pad and in predetermined areas;
- and
- forming, on an upper portion of the insulating film, second wiring that is connected to the pad, and also forming the second wiring such that apertures are formed therein at the predetermined areas.
1 more element
Dependencies are inferred from the claim text.