Semiconductor sub-assembly and semiconductor power module

A semiconductor sub-assembly, comprising:

• a single or a plurality of semiconductor chips having a first electrode formed on the lower surface thereof, having a second electrode formed on the upper surface thereof, and having a plurality of chip-side signal electrode pads formed at one end of the upper surface thereof;
• an embedded substrate in which the semiconductor chip is embedded, wherein the embedded substrate completely surrounds the semiconductor chip without overlying or underlying the semiconductor chip;
• and
• a plurality of extension signal electrode pads connected to each of the chip-side signal electrode pads,
• wherein the extension signal electrode pad is formed on the embedded substrate in a size greater than the chip-side signal electrode pad when viewed on the plane,
• wherein an opening for receiving the semiconductor chip is formed in the embedded substrate,
• wherein electrical connection between the chip-side signal electrode pad of the semiconductor chip and the extension signal electrode pad is performed in a two-layer wiring layer of metal plating, and the wiring layers include a first wiring layer and a second wiring layer.