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US 11,538,756 B2Granted
Bonding structure and method for manufacturing the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsShun-Tsat Tu, Pei-Jen Lo, Chien-Han Chiu
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Abstract
A bonding structure is provided. The bonding structure includes a conductive layer, a seed layer, and a nanotwinned copper (NT-Cu) layer. The seed layer is disposed on the conductive layer. The NT-Cu layer is disposed on the seed layer. The NT-Cu layer has anisotropic crystal structure.
Claims16
A bonding structure, comprising:
- a conductive layer;
- a seed layer disposed on the conductive layer;
- and
- a nanotwinned copper (NT-Cu) layer disposed on the seed layer, wherein the NT-Cu layer has anisotropic crystal structure, wherein the NT-Cu layer has a top surface exposed from a dielectric layer.
1 more element
A bonding structure, comprising:
- a seed layer;
- an anisotropic NT-Cu layer disposed on the seed layer, wherein the NT-Cu layer is highly (111) oriented;
- a dielectric layer surrounding the anisotropic NT-Cu layer;
- and
- a barrier layer disposed between the dielectric layer and the anisotropic NT-Cu layer, wherein the barrier layer includes an extension portion protruding from an outer sidewall of the barrier layer.
2 more elements
A bonding structure, comprising:
- a seed layer;
- an anisotropic NT-Cu layer disposed on the seed layer;
- a dielectric layer surrounding the anisotropic NT-Cu layer;
- and
- a barrier layer disposed between the dielectric layer and the anisotropic NT-Cu layer, wherein the NT-Cu layer is tapered.
2 more elements
A method for manufacturing a bonding structure, comprising:
- providing a seed layer;
- forming a NT-Cu layer on the seed layer;
- and
- forming a barrier layer surrounding the NT-Cu layer, wherein forming a NT-Cu layer on the seed layer comprises:
- providing a photoresist layer on the seed layer, wherein the photoresist layer defines an opening exposing the seed layer;
- and
- forming the NT-Cu layer on the seed layer exposed from the opening.
4 more elements
A method for manufacturing a bonding structure, comprising:
- providing a seed layer;
- forming a NT-Cu layer on the seed layer;
- and
- forming a barrier layer surrounding the NT-Cu layer, wherein the NT-Cu layer is tapered.
1 more element
Dependencies are inferred from the claim text.