Random cut patterning

An semiconductor device comprising:

• on a substrate of the semiconductor device, a first metal line and a second metal line extending in a vertical direction;
• and
• on the substrate, a third metal line and a fourth metal line extending in a horizontal direction perpendicular to the first metal line and the second metal line, formed respectively by:
• forming, using a first patterning technique, a first circular region located at one end of the first metal line and a second circular region at one end of the second metal line;
• laterally extending, using a second patterning technique, the first circular region to the third metal line;
• and
• laterally extending, using the second patterning technique, the second circular region to the fourth metal line;
• and
• a backside power distribution network underneath the substrate, wherein the backside power distribution network is configured to power electrical components.

An semiconductor device comprising:

• a patterned first circular region at one end of a first metal line;
• and a patterned second circular region at one end of a second metal line;
• and
• wherein the patterned first circular region extends to a third metal line;
• wherein the patterned second circular region extends to a fourth metal line;
• and wherein the third metal line and the fourth metal line extend in a horizontal direction perpendicular to the first metal line and the second metal line;
• and
• a patterned third circular region at one end of a fifth metal line.