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US 11,538,748 B2Granted
Semiconductor device with capacitor element
AssigneeMediaTek Singapore Pte. Ltd.
InventorsZhigang Duan, Jinghao Chen
Life of this patent
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Abstract
A semiconductor device includes a substrate and at least one capacitor element. The capacitor element is on the substrate. The capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.
Claims10
A semiconductor device, comprising:
- a substrate;
- at least one capacitor element on the substrate, wherein the at least one capacitor element comprises:
- a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate;
- and
- a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer;
- and
- a connection feature penetrating through the interlayer dielectric layer and the substrate, wherein the connection feature extends to reach a bottom surface of the substrate, and the first pad of one of the at least one capacitor element is connected to the connection feature.
4 more elements
Dependencies are inferred from the claim text.