Cascode semiconductor
AssigneeNexperia B.V.
InventorsRicardo Yandoc, Robert Montgomery, Adam Thomas Rosillo
Life of this patent
Estimating the term…
Abstract
This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.
Claims18
A cascode high electron mobility (HEMT) semiconductor device comprising:
- a lead frame;
- a die pad attached to the lead frame;
- a HEMT die attached to the die pad, wherein the HEMT die further comprises:
- a HEMT source and a HEMT drain on a first side,
- wherein the HEMT drain further comprises a HEMT drain clip, and
- a HEMT gate on a second side,
- a metal-oxide-semiconductor field-effect transistor (MOSFET) die attached to
- a source of the HEMT die, wherein the MOSFET die further comprises:
- a MOSFET source, a MOSFET gate and a MOSFET drain,
- wherein the MOSFET drain is connected to the HEMT source,
- wherein the MOSFET source further comprises a MOSFET source clip,
- wherein the MOSFET source clip further comprises a pillar to connect the MOSFET source to the HEMT gate,
- wherein the connection between the MOSFET source to the HEMT gate is established by a conductive material.
A method of forming a cascode high electron mobility (HEMT) semiconductor device comprising:
- attaching a die pad attached to a lead frame;
- attaching a HEMT die to the die pad, wherein the HEMT die further comprises:
- a HEMT source and a HEMT drain on a first side, wherein the HEMT drain further comprises a HEMT drain clip, and
- a HEMT gate on a second side;
- and
- attaching a metal-oxide-semiconductor field-effect transistor (MOSFET) die to a source of the HEMT die, wherein the MOSFET die further comprises:
- a MOSFET source, a MOSFET gate and a MOSFET drain,
- wherein the MOSFET drain is connected to the HEMT source,
- wherein the MOSFET source further comprises a MOSFET source clip,
- wherein the MOSFET source clip further comprises a pillar to connect the MOSFET source to the HEMT gate, and
- wherein the connection between the MOSFET source to the HEMT gate is established by a conductive material.
Dependencies are inferred from the claim text.