Isolated temperature sensor device

A method, comprising:

• mounting a semiconductor die including a temperature sensor to a die pad of a package substrate, the temperature sensor formed in a conductor layer of an uppermost one of successive metallization layers formed over an active surface of the semiconductor die, the successive metallization layers including a respective conductor layer in a dielectric material and including conductive vias coupled to the respective conductor layers and extending through the dielectric material to respective conductor layers in adjacent metallization layers, the die pad electrically connected to a first lead of the package substrate;
• coupling the temperature sensor to bond pads, the bond pads electrically connected to a second lead and to a third lead of the package substrate, respectively, the second lead and the third lead spaced from and isolated from one another and from the die pad and the first lead;
• placing the first lead into electrical and thermal contact with a high voltage trace;
• and
• using the second lead and the third lead, monitoring a physical characteristic of the temperature sensor to determine a temperature.

A packaged temperature sensor device, comprising:

• a metal lead frame having a die pad that is connected to a first lead;
• a second lead and a third lead of the metal lead frame spaced from the die pad and the first lead, and isolated from the die pad;
• a semiconductor die mounted to the die pad including a temperature sensor, comprising:
• a semiconductor substrate having a backside surface conductively mounted to the die pad and having an active surface opposite the backside surface;
• successive metallization layers stacked over the active surface of the semiconductor die, a first metallization layer closest to the active surface, and each successive metallization layer overlying a previous metallization layer, the uppermost metallization layer being the furthest metallization layer from the active surface, the metallization layers comprising a respective conductor layer in a dielectric material, and including conductive vias extending from the respective conductor layer to respective conductor layers in adjacent metallization layers;
• the temperature sensor formed of the respective conductor layer in the uppermost metallization layer, and a high voltage ring formed of the respective conductor layer in the uppermost metallization layer, the high voltage ring spaced from the temperature sensor and surrounding the temperature sensor;
• and
• bond pads formed in the uppermost metallization layer, the bond pads configured for making electrical connections;
• electrical connections comprising bond wires connecting the second lead and third lead to the bond pads on the semiconductor die;
• and
• mold compound covering the semiconductor die, the bond wires, and portions of the second lead and the third lead, while additional portions of the second lead and the third lead are exposed from the mold compound, forming terminals for the packaged temperature sensor device.