Semiconductor device, semiconductor chip and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• forming a semiconductor layer on a side of the substrate;
• and
• forming a plurality of gates, a plurality of drains, and a plurality of sources on a side of the semiconductor layer away from the substrate, each gate located between one of the sources and one of the drains, and the gates, sources, and drains located in an active region of the semiconductor device;
• wherein a gate pitch is formed between any two adjacent gates, wherein the formed respective gate pitches include at least two unequal gate pitches, and wherein a maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at two outermost ends in the semiconductor device in a gate length direction and a total number of gates of the semiconductor device, and
• wherein the maximum gate pitch is located between adjacent gates on both sides of a corresponding source, and wherein a minimum gate pitch of the respective gate pitches is located between adjacent gates on both sides of a corresponding drain.