Semiconductor package comprising a heat dissipation structure and an outer peripheral frame used as a resin flow barrier

A semiconductor package, comprising:

• an insulating substrate;
• a first semiconductor chip in which an active surface is bonded on a first main surface of the insulating substrate via a plurality of first bonding materials;
• a second semiconductor chip, with a thickness smaller than a thickness of the first semiconductor chip, in which an active surface is bonded on the first main surface via a plurality of second bonding materials;
• a heat radiation member, wherein a main surface of the first semiconductor chip and a main surface of the second semiconductor chip located on respective opposite sides of the active surface of the first semiconductor chip and the active surface of the second semiconductor chip are bonded to a lower surface of the heat radiation member;
• a barrier surrounding an end edge portion of the first main surface of the insulating substrate and extending in a vertical direction of the first main surface to have a gap with the side wall of the heat radiation member;
• and
• a sealing resin having contact with at least part of a side wall of the heat radiation member without being raised over an upper surface of the heat radiation member to seal the first and second semiconductor chips on the insulating substrate, wherein
• the barrier has a gap with an end edge portion of the heat radiation member and has a height not to be higher than an upper surface of the heat radiation member and
• in the heat radiation member, a thickness of a first bonding part to which the first semiconductor chip is bonded is smaller than a thickness of a second bonding part to which the second semiconductor chip is bonded.