Semiconductor module arrangement

A semiconductor module arrangement, comprising:

• a housing;
• and
• at least one pair of semiconductor substrates arranged inside the housing, each pair of semiconductor substrates comprising a first semiconductor substrate and a second semiconductor substrate, wherein:
• the first semiconductor substrate comprises a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer;
• the second semiconductor substrate comprises a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer,
• the third metallization layer of the first semiconductor substrate is electrically coupled to a first electrical potential;
• and
• the third metallization layer of the second semiconductor substrate is electrically coupled to a second electrical potential having an opposite polarity as the first electrical potential such that a voltage is supplied via the third metallization layer of the first semiconductor substrate and the third metallization layer of the second semiconductor substrate.