Method of producing semiconductor devices in a substrate including etching of the pattern of an etch mask and/or a reticle to create the first dicing lanes encircling the devices and second dicing lanes defined by fracture lines of the edges of the substrate

A method for producing semiconductor devices in a substrate, comprising at least the implementation of the following steps:

• photolithography of a pattern of a reticle over a portion of a main face of the substrate, defining at least first elements of at least one of the semiconductor devices in the substrate, an exposure of the pattern of the reticle being repeated a plurality of times over the main face of the substrate in order to define said at least first elements of all the semiconductor devices,
• photolithography of a pattern of an etch mask over all of the main face of the substrate,
• etching of the photolithography patterns over the main face of the substrate into one portion of a thickness of the substrate,
• wherein first dicing lanes encircling the semiconductor devices are included in the pattern of the etch mask and/or in the pattern of the reticle, and the step of photolithography of the pattern of the etch mask over all of the main face of the substrate defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate,
• and further comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes, forming lines of weakness in the substrate, under the first and second dicing lanes.