Method of transfer printing
AssigneeAnalog Devices International Unlimited Company
InventorsJames G. Fiorenza, Susan L. Feindt, Michael D. Delaus, Matthew Duffy, Ryan Iutzi, Kenneth Flanders, Rama Krishna Kotlanka
Life of this patent
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Abstract
A transfer printing method is described that can be used for a wide variety of materials, such as to allow for circuits formed of different materials to be integrated together on a single integrated circuit. A tether (18) is formed on dice regions (16) of a first wafer (30), followed by attachment of a second wafer (32) to the tethers. The dice regions (16) are processed so as to be separated, followed by transfer printing of the dice regions to a third wafer (34).
Claims23
A method of transfer printing, the method comprising:
- obtaining a first wafer having a tether structure and a plurality of dice regions, the tether structure having a first end and a second end, the first end attached to a first dice region of the plurality of dice regions, wherein the tether structure extends perpendicular to a surface of the first wafer, wherein the first end is vertically aligned with the second end, and wherein the tether structure extends beyond a vertical extent of circuitry on the first wafer;
- attaching, subsequent to obtaining the first wafer having the tether structure and plurality of dice regions, a second wafer to the second end of the tether structure;
- without removal of a sacrificial layer, processing the first wafer to disconnect the first dice region of the plurality of dice regions on the first wafer from other dice regions on the first wafer;
- separating the first dice region of the plurality of dice regions on the first wafer and the tether structure from the second wafer;
- and
- attaching the separated first dice region of the plurality of dice regions to a third wafer using the second end of the tether structure.
A method of parallel transfer printing that can accommodate a first semiconductor structure and a second semiconductor structure, the method comprising:
- joining first ends of a plurality of tether structures to respective ones of a plurality of dice regions on a first wafer, the plurality of dice regions on the first wafer corresponding to a first combination of materials;
- attaching a second wafer to second ends of the plurality of tether structures, wherein the tether structures extend perpendicular to a surface of the first wafer, wherein the first ends are vertically aligned with corresponding second ends, and wherein the tether structures extend beyond a vertical extent of circuitry on the first wafer;
- without removal of a sacrificial layer, processing the first wafer to disconnect each of the dice regions on the first wafer from other dice regions on the first wafer;
- separating from the second wafer, each of the dice regions and the plurality of tether structures on the first wafer;
- and
- attaching to a third wafer, each of the dice regions and the second ends of the plurality of tether structures on the first wafer.
A method of transfer printing that can accommodate a first semiconductor structure and a second semiconductor structure, the method comprising:
- joining a first end of a tether structure to one of a plurality of dice regions on a first wafer;
- attaching a second wafer to a second end of the tether structure, wherein the tether structure extends perpendicular to a surface of the first wafer, wherein the first end is vertically aligned with the second end, and wherein the tether structure extends beyond a vertical extent of circuitry on the first wafer;
- without removal of a sacrificial layer, processing the first wafer to disconnect the one of the plurality of dice regions on the first wafer from other dice regions on the first wafer;
- separating the one of the plurality of dice regions on the first wafer and the tether structure from the second wafer;
- and
- attaching the separated one of the plurality of dice regions to a third wafer using the second end of the tether structure.
Dependencies are inferred from the claim text.