Substrate processing method and substrate processing apparatus

A substrate processing apparatus for processing a substrate, the apparatus comprising:

• an electrostatic chuck configured to place the substrate on the electrostatic chuck;
• and
• a controller configured to control the electrostatic chuck,
• wherein the controller controls the electrostatic chuck to execute:
• (a) a placement step of placing the substrate on the electrostatic chuck set to have a predetermined temperature;
• (b) a first attraction step of attracting the substrate onto the electrostatic chuck by applying a first direct current (DC) voltage to the electrostatic chuck;
• (c) a holding step of holding the attraction of the substrate by the electrostatic chuck while applying the first DC voltage to the electrostatic chuck, until a temperature difference between the electrostatic chuck and the substrate becomes 30 degrees C. or less;
• and
• (d) a second attraction step of attracting the substrate onto the electrostatic chuck by applying a second DC voltage, which is higher than the first DC voltage, to the electrostatic chuck,
• wherein the steps (a) to (d) are performed sequentially.