Substrate processing apparatus

A substrate processing apparatus comprising:

• a processing chamber including a first internal space and a second internal space disposed below the first internal space, wherein the first internal space is configured to generate plasma;
• an ion beam supply including an induction electrode disposed to divide the processing chamber into the first internal space and the second internal space, wherein the induction electrode includes a plurality of through-holes configured to induce an ion beam extracted from the plasma to irradiate the second internal space;
• and
• a radical supply including a reservoir disposed in the second internal space and configured to receive chemical liquid, and a lower electrode configured to apply nanopulses to the reservoir to convert the chemical liquid into an in-liquid plasma state.

A substrate processing apparatus comprising:

• a plasma generator configured to generate plasma in a processing chamber;
• an ion beam supply configured to extract an ion beam from the plasma in the processing chamber;
• and
• a radical supply configured to:
• apply nanopulses to a chemical liquid in which an object is immersed to convert the chemical liquid into an in-liquid plasma state containing ions and radicals,
• position a reservoir configured to receive the chemical liquid to face the ion beam supply, and
• impart an etching directivity for the radicals to perform an anisotropic etching reaction of the object in as extraction direction of the ion beam.