Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a gas supply system configured to supply a first gas, which contains a metal and a halogen, a first reducing gas which contains silicon and hydrogen and does not contain a halogen, and a second gas into the process chamber;
• an exhaust system configured to exhaust an interior of the process chamber;
• and
• a controller configured to control the gas supply system and the exhaust system so as to form a metal-containing film substantially not containing a silicon atom on the substrate by sequentially performing:
• (a) supplying the first gas and the first reducing gas to the substrate accommodated in the process chamber by setting an internal pressure of the process chamber to a value in a predetermined pressure range during at least the supply of the first reducing gas, wherein (a) includes timing of continuing the supply of the first reducing gas after the supply of the first gas stops;
• (b) removing the first gas and the first reducing gas that remain in the process chamber;
• (c) supplying the second gas to the substrate;
• and
• (d) removing the second gas remaining in the process chamber.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• forming a metal-containing film substantially not containing a silicon atom on a substrate by sequentially performing:
• (a) supplying a first gas, which contains a metal and a halogen, and a first reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value in a predetermined pressure range during at least the supply of the first reducing gas, wherein (a) includes a timing of continuing the supply of the first reducing gas after the supply of the first gas stops;
• (b) removing the first gas and the first reducing gas that remain in the process chamber;
• (c) supplying a second gas to the substrate;
• and
• (d) removing the second gas remaining in the process chamber.